1. Infrared Emitting Diodes
2. Photo Diodes
3. Photo Transistors
4. Transmissive Type Photo Interrupter
5. Separated Type Photo Interrupter 5-1. Led Ass'y
5-2. Photo Transistor Ass'y
| Type No. | Feature | MAXMUM RATINGS | ELECTRO-OPTICAL CHARACTERISTICS | Data Sheet | ||||||||
| Forward | Reverse | Power | Operating | Radiant intensity | Forward voltage | Peak emission | Half angle | |||||
| current | voltage | dissipation | temp. | PO[mW/sr] | VF[V] | wavelength | ΔΘ[deg.] | |||||
| IF[mA] | VR[V] | PD[mW] | Topr.[ °C] | λp[nm] | ||||||||
| Typ. | IF[mA] | Max. | IF[mA] | Typ. | Typ. | |||||||
| RE94-EZ5A-10R | 100 | 5 | 180 | -40 ~ + 85 | 5.8 | 20 | 1.8 | 70 | 940 | ± 9 |  |
|
2. Photo Diodes
| Type No. | Feature | Open circuit Valtage VOC[v] Typ | Shot circuit current ISC[uA] | Dark current ID[uA] | Capacitance CT[㎊] | Spectral sensitivity λ[nm] | Peak wavelength λp[nm] | Half angle Aθ[deg.] | Operating temp Topr. [°C] | Data Sheet | ||
| Typ | EV [㏓] | MAX | VR[V] | Typ. | Typ. | |||||||
3. Photo Transistors
| Type No. | Feature | MAXIMUM RATINGS | ELECTRO-OPTICAL CHARACTERISTICS | Data Sheet | |||||||||
| C-E Voltage Vceo[V] | Collector Power dissipation PC[mW] | Operating temp. Topr[°C] | Light current IL[mA] | Dark current ID[nA] | Spectral sensitivity λ[nm] | Peak wavelength λp[nm]Typ | Half angle AΘ[deg.] | ||||||
| Min | Vceo[V] | Ev[㏓] | Max | Vce[V] | |||||||||
| RPT87-E07N-15R | 35 | 75 | -20~+85 | 4 | 5 | 1000 | 100 | 20 | 700~1040 | 880 | ±15 | |
|
4. Transmissive Type Photo Interrupter
| Type No. | FEATURE | ELECTRO-OPTICAL CHARACTERISTICS(Ta= 25°C) | Data Sheet | |||||||||||||||||
| Feature | Gap[mm] | Slit[mm] | INPUT | OUTPUT | Transmission | |||||||||||||||
| Forward voltage VF[V] |
Reverse current lR[uA] |
Dark current lCEO[nA] |
Light current lc[mA] |
C-E saturation voltage VCE[sat][V] |
Rise time tr[μsec] |
|||||||||||||||
| Typ | lF[mA] | Max. | VR[V] | Max. | VCE[V] | Min | VCE[V] | lF[mA] | Max. | lF[mA] | lC[mA] | Typ. | VCE[V] | lC[mA] | RL[㏀] | |||||
| 47 | ||||||||||||||||||||
5. Separated Type Photo Interrupter 5-1. Led Ass'y
| Type No. | Feature | Forward Voltage [VF] | Reverse Current IR[μA] | Peak Wave λP[nm] | Half Angle ΔΘ[deg.] | Current Transfer Ratio | Data Sheet | ||||||
| Typ | IF(mA) | Max | VR(V) | Typ | IF(mA) | Typ | Min | Typ | Max | Condition | |||
| RPI-A9001S | 1.2 | 20 | 10.0 | 5 | 940 | 60 | ±5 | 0.1 | - | - | L=100mm IF=20mA VCC=5V | |
|
5-2. Photo Transistor Ass'y
| Type No. | Feature | Dark Current ICEO[nA] | Collector-Emitter Saturation Voltage VCE(sat) |
Peak Wave λP[nm] | Spectral Sensitivity λP[nm] |
Half Angle ΔΘ[deg.] | Current Transfer Ratio | Data Sheet | |||||
| Max | VCE[V],EV[lx] | Max | IC[mA],EV[lx] | Typ | Typ | Typ | Min | Typ | Max | Condition | |||
| RPI-A9002S | 100 | 10, 0 lx | 0.4 | 0.5, 2000 lx | 880 | 750~1050 | ±5 | 0.12 | - | - | L=100mm IF=20mA VCC=5V | |
|